Triple Gate Oxide by Nitrogen Implantation Integrated in a 0.13um CMOS Flow

Author

Carrère, J-P ; Grouillet, A. ; Guyader, F. ; Beverina, A. ; Bidaud, M. ; Halimaoui, A.

Author_Institution

STMicroelectronics, Crolles Cedex, France

fYear

2002

fDate

24-26 September 2002

Firstpage

155

Lastpage

158

Keywords

Nitrogen;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2002. Proceeding of the 32nd European

Print_ISBN

88-900847-8-2

Type

DOI

10.1109/ESSDERC.2002.194893

Filename

1503823

Link To Document