RPN Oxynitride Gate Dielectrics for 90 nm Low Power CMOS Applications

Author

Veloso, A. ; Jurczak, M. ; Cubaynes, F.N. ; Rooyackers, R. ; Mertens, S. ; Rothschild, A. ; Schaekers, M. ; Al-Shareef, H.N. ; Murto, R.W. ; Dachs, C. J J ; Badenes, G.

Author_Institution

IMEC, Leuven, Belgium

fYear

2002

fDate

24-26 September 2002

Firstpage

159

Lastpage

162

Keywords

CMOS technology; Furnaces; Gate leakage; Helium; High-K gate dielectrics; MOS devices; Nitrogen; Oxidation; Plasma applications; Plasma devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2002. Proceeding of the 32nd European

Print_ISBN

88-900847-8-2

Type

DOI

10.1109/ESSDERC.2002.194894

Filename

1503824

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