Title :
Feasibility of 4.5 kV and 10 kV Silicon Carbide IGBTs
Author :
Bakowski, M. ; Gustafsson, U ; Ramberg, L.P.
Author_Institution :
Industrial Microelectronics Center, P. O. Box 1084, S-164 21 Kista-Stockholm, Sweden
Abstract :
The on-state voltage of the 4.5 kV and 10 kV PT and NPT IGBT structures in 6H SiC has been investigated by means of numerical simulation using an improved version of TMA´s Medici which includes anisotropic physical models. A realistic trench gate UMOS type structure has been used. The influence of the carrier lifetime and temperature on the on-state characteristics have been studied. The shortest carrier lifetime required for an on-state voltage of less than 7V at 100 A/cm2 is 2¿s and 10¿s for PT and NPT designs, respectively. At temperatures below 400K and 300K for the PT and NPT designs, respectively, anomalous on-state characteristics are observed. This is attributed to the insufficient p+ emitter injection efficiency, associated with incomplete ionisation of the p-type dopant.
Keywords :
Anisotropic magnetoresistance; Charge carrier lifetime; Dielectric materials; Insulated gate bipolar transistors; Ionization; Low voltage; Numerical simulation; Silicon carbide; Temperature; Thyristors;
Conference_Titel :
Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
Conference_Location :
Edinburgh, Scotland
