DocumentCode
1921536
Title
2.2: Field emission behavior of ZnO nanowire planar cathodes
Author
Semet, Vincent ; Binh, Vu Thien ; Pauporté, Thierry ; Joulaud, Laurent ; Vermersch, François Julien
Author_Institution
LPMCN, Univ. of Lyon 1, Villeurbanne, France
fYear
2010
fDate
26-30 July 2010
Firstpage
3
Lastpage
4
Abstract
Zinc oxide (ZnO) nanowires were deposited on a plane conductive surface. They were vertically aligned, with 3 μ and 140 nm respectively for the length and the diameter, and with an array density of 10 nanowires/μm2. A field emission study by scanning anode field emission microscopy was performed to evaluate the field emission properties. The effective work function is about 1 eV, the threshold of the macroscopic field Fapp is about 6 V/μm for a current density JFE equal to 0.05 A/m2, which is a rather low field. For JFE greater than 500 A/m2, the nanowires evolved into a bulbous apex by surface diffusion.
Keywords
II-VI semiconductors; cathodes; current density; electrodeposition; field emission; nanowires; scanning electron microscopy; work function; zinc compounds; ZnO; array density; current density; nanowire planar cathodes; scanning anode field emission microscopy; surface diffusion; work function; Arrays; Cathodes; Current density; Iron; Surface treatment; Voltage measurement; Zinc oxide; ZnO; cold cathode; electrodeposition growth; field emission; nanowires;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Nanoelectronics Conference (IVNC), 2010 23rd International
Conference_Location
Palo Alto, CA
Print_ISBN
978-1-4244-7889-7
Electronic_ISBN
978-1-4244-7888-0
Type
conf
DOI
10.1109/IVNC.2010.5563227
Filename
5563227
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