Highly linear CMOS RF MMIC amplifier using multiple gated transistors and its Volterra series analysis

CMOS RF MMIC amplifiers are fabricated with linearization technique using multiple gated transistors. At 900 MHz, double and triple gated amplifiers show 2.5-4.5 dB larger figure of merit (linearity-DC power consumption), which means that only 1/2/spl sim/1/3 of DC power is needed to obtain the same OIP/sub 3/ value. Using Volterra series analysis and harmonic balance simulation, it is shown that the linearization technique with the 2nd harmonic termination can increase IIP/sub 3/ by amount of 16 dB max. without additional DC power consumption at optimal bias condition, which can reduce more than 90% of DC power consumption with the same linearity performance.