Title :
Dielectric behavior of ferroelectric thin films at high frequencies
Author :
Chen, Jiann-Jong ; Udayakumar, K.R. ; Brooks, K.G. ; Cross, L.E.
Author_Institution :
Pennsylvania State Univ., University Park, PA, USA
fDate :
30 Aug-2 Sep 1992
Abstract :
The high-frequency dielectric response of sol-gel-derived lead zirconate titanate (PZT) thin films have been investigated. Conceptualizing the presence of interface layers was critical in explaining the dielectric measurements. By a careful control of the processing parameters, aided by rapid thermal annealing, the low-frequency dielectric characteristics could be sustained up to a gigahertz range. Ba0.5Sr0.5TiO3, which is paraelectric at room temperature, appears to be a potential candidate material for high-frequency applications
Keywords :
annealing; dielectric properties of solids; ferroelectric thin films; lead compounds; rapid thermal processing; sol-gel processing; Ba0.5Sr0.5TiO3; PbZrO3TiO3; dielectric measurements; ferroelectric thin films; high-frequency dielectric response; interface layers; low-frequency dielectric characteristics; paraelectric; processing parameters; rapid thermal annealing; sol gel derived PZT thin films; Dielectric measurements; Dielectric thin films; Ferroelectric materials; Frequency; Process control; Rapid thermal annealing; Rapid thermal processing; Strontium; Temperature; Titanium compounds;
Conference_Titel :
Applications of Ferroelectrics, 1992. ISAF '92., Proceedings of the Eighth IEEE International Symposium on
Conference_Location :
Greenville, SC
Print_ISBN :
0-7803-0465-9
DOI :
10.1109/ISAF.1992.300657
