Dielectric behavior of ferroelectric thin films at high frequencies

Author

Chen, Jiann-Jong ; Udayakumar, K.R. ; Brooks, K.G. ; Cross, L.E.

Author_Institution

Pennsylvania State Univ., University Park, PA, USA

fYear

1992

fDate

30 Aug-2 Sep 1992

Firstpage

182

Lastpage

184

Abstract

The high-frequency dielectric response of sol-gel-derived lead zirconate titanate (PZT) thin films have been investigated. Conceptualizing the presence of interface layers was critical in explaining the dielectric measurements. By a careful control of the processing parameters, aided by rapid thermal annealing, the low-frequency dielectric characteristics could be sustained up to a gigahertz range. Ba_0.5Sr_0.5TiO₃, which is paraelectric at room temperature, appears to be a potential candidate material for high-frequency applications

Keywords

annealing; dielectric properties of solids; ferroelectric thin films; lead compounds; rapid thermal processing; sol-gel processing; Ba_0.5Sr_0.5TiO₃; PbZrO3TiO3; dielectric measurements; ferroelectric thin films; high-frequency dielectric response; interface layers; low-frequency dielectric characteristics; paraelectric; processing parameters; rapid thermal annealing; sol gel derived PZT thin films; Dielectric measurements; Dielectric thin films; Ferroelectric materials; Frequency; Process control; Rapid thermal annealing; Rapid thermal processing; Strontium; Temperature; Titanium compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 1992. ISAF '92., Proceedings of the Eighth IEEE International Symposium on

Conference_Location

Greenville, SC

Print_ISBN

0-7803-0465-9

Type

conf

DOI

10.1109/ISAF.1992.300657

Filename

300657