Title :
Efficient Monte Carlo Simulation of Tunnel Currents in MOS Structures
Author :
Grgec, D. ; Vexler, M.I. ; Jungemann, C. ; Meinerzhagen, B.
Author_Institution :
University of Bremen, Germany
fDate :
24-26 September 2002
Keywords :
Charge carrier density; Circuit simulation; Doping; MOSFETs; Monte Carlo methods; Probability; Schrodinger equation; Solid modeling; Transmission line measurements; Tunneling;
Conference_Titel :
Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
Print_ISBN :
88-900847-8-2
DOI :
10.1109/ESSDERC.2002.194899
