DocumentCode :
1921597
Title :
Efficient Monte Carlo Simulation of Tunnel Currents in MOS Structures
Author :
Grgec, D. ; Vexler, M.I. ; Jungemann, C. ; Meinerzhagen, B.
Author_Institution :
University of Bremen, Germany
fYear :
2002
fDate :
24-26 September 2002
Firstpage :
179
Lastpage :
182
Keywords :
Charge carrier density; Circuit simulation; Doping; MOSFETs; Monte Carlo methods; Probability; Schrodinger equation; Solid modeling; Transmission line measurements; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
Print_ISBN :
88-900847-8-2
Type :
conf
DOI :
10.1109/ESSDERC.2002.194899
Filename :
1503829
Link To Document :
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