• DocumentCode
    1921597
  • Title

    Efficient Monte Carlo Simulation of Tunnel Currents in MOS Structures

  • Author

    Grgec, D. ; Vexler, M.I. ; Jungemann, C. ; Meinerzhagen, B.

  • Author_Institution
    University of Bremen, Germany
  • fYear
    2002
  • fDate
    24-26 September 2002
  • Firstpage
    179
  • Lastpage
    182
  • Keywords
    Charge carrier density; Circuit simulation; Doping; MOSFETs; Monte Carlo methods; Probability; Schrodinger equation; Solid modeling; Transmission line measurements; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
  • Print_ISBN
    88-900847-8-2
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2002.194899
  • Filename
    1503829
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1921597