Title :
Monolithic 6W Ka-band high power amplifier
Author_Institution :
Motorola Labs., Motorola Inc., Chandler, AZ, USA
Abstract :
The design and performance of a fully monolithic 6W Ka-band power amplifier is outlined. Excellent agreement between modeled and measured performance was demonstrated. This 3-stage power amplifier, which power combines 16 FETs on the third stage, is fully matched on chip to 50/spl Omega/ at the input and output wire bond pads. Performance achieved /spl sim/20.5 dB gain from 24-32 GHz with a peak power of >6W and PAE of /spl sim/21%. This performance was achieved using a 0.1 /spl mu/m power PHEMT process. To the authors knowledge, this is the highest output power demonstrated from a single device in this frequency band.
Keywords :
HEMT integrated circuits; MMIC power amplifiers; field effect MMIC; integrated circuit measurement; integrated circuit modelling; 20.5 dB; 21 percent; 24 to 32 GHz; 3-stage power amplifier; 6 W; Ka-band; high power amplifier; power PHEMT process; wire bond pads; Bonding; FETs; Frequency; High power amplifiers; PHEMTs; Performance gain; Power amplifiers; Power generation; Semiconductor device measurement; Wire;
Conference_Titel :
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location :
Phoenix, AZ, USA
Print_ISBN :
0-7803-6538-0
DOI :
10.1109/MWSYM.2001.966947
