DocumentCode :
1921641
Title :
Improved Ruggedness of a High Current Vertical Power Dmos
Author :
Kim, M.J. ; Mukherjee, S. ; Young, J.C.
Author_Institution :
Philips Laboratories, North American Philips Corporation, N.Y.
fYear :
1991
fDate :
17-19 June 1991
Keywords :
Automotive engineering; Avalanche breakdown; Boron; Circuits; Dielectric substrates; Implants; Industrial control; Intelligent vehicles; Laboratories; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 1991. 49th Annual
Conference_Location :
Boulder, CO, USA
Print_ISBN :
0-87942-647-0
Type :
conf
DOI :
10.1109/DRC.1991.664675
Filename :
664675
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1921641
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