• DocumentCode
    1921649
  • Title

    An Improved Model for Electron Mobility Degradation by Remote Coulomb Scattering in Ultra-Thin Oxide MOSFETs

  • Author

    Esseni, David ; Abramo, Antonio

  • Author_Institution
    DIEGM, University of Udine, Italy
  • fYear
    2002
  • fDate
    24-26 September 2002
  • Firstpage
    183
  • Lastpage
    186
  • Keywords
    CMOS technology; Degradation; Dielectrics; Electron mobility; MOSFET circuits; Particle scattering; Poisson equations; Quantum mechanics; Semiconductor device modeling; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
  • Print_ISBN
    88-900847-8-2
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2002.194900
  • Filename
    1503830
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1921649