Title :
Study of Drain-Induced-Barrier Lowering in Deep Submicron MOSFETs Versus Temperature
Author :
Fikry, W. ; Ghibaudo, G. ; Dutoit, M.
Author_Institution :
LPCS, ENSERG, BP 257, 38016 Grenoble, France.; Faculty of Engineering, Ain-Shams University, Cairo, Egypt.
Abstract :
A new method for the extraction of the Drain Induced Barrier Lowering (DIBL) parameter in a MOSFET is presented. This method is employed for the study of the influence of temperature on the DIBL phenomenon. The DIBL coefficient is found to be almost temperature independent between 50K and 300K. The method also allows the intrinsic output characteristics of the device to be re-calculated.
Keywords :
CMOS process; Current measurement; Electron beams; Helium; MOS devices; MOSFETs; Temperature dependence; Testing; Threshold voltage; Transconductance;
Conference_Titel :
Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
Conference_Location :
Edinburgh, Scotland
