Transport Simulations of Ultrashort Planar Doped Barrier Field Effect Transistors

We present a study of vertically-grown Si ultra-short FET´s based on a new implementation of the Cellular Automata simulation. The probabilistic scattering rates for the electric field have been replaced in the cellular automaton by a new deterministic scattering rule in a fully three-dimensional momentum-discretization, leading to a significant suppression of statistical errors. We have also developed a fast multigrid/solver for the Poisson equation that offers the possibility to solve the Boltzmann and Poisson equations asynchronously in a multi-processor environment.