Title :
The Recent Trends in a-Si:H Thin-Film Transistors Technology
Author_Institution :
Display Device Engineering Laboratory, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama, 235 Japan
Abstract :
This paper focuses on the recent progress for the enhancement of performance and the reduction of the cost of fabrication of a-Si:H TFTs for AM-LCDs. Topics included are improvement of TFT characteristics, low resistivity gate line materials, and high aperture structures, for obtaining high performance large-size displays with high pixel density. The reduction in number of mask-steps and the use of high throughput process during the TFT-LCD manufacturing are also discussed.
Keywords :
Apertures; Cathode ray tubes; Computer displays; Conductivity; Costs; Liquid crystal displays; Manufacturing processes; Parasitic capacitance; Personal communication networks; Thin film transistors;
Conference_Titel :
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location :
Bologna, Italy
