DocumentCode
1921711
Title
Monte Carlo Simulation of Program and Erase Charge Distributions in NROM(TM) Devices
Author
Ingrosso, Gianluca ; Selmi, Luca ; Sangiorgi, Enrico
Author_Institution
DIEGM, University of Udine, Italy
fYear
2002
fDate
24-26 September 2002
Firstpage
187
Lastpage
190
Keywords
Analytical models; Channel hot electron injection; Charge carrier processes; Electron traps; Fabrication; Heating; Monte Carlo methods; Nonvolatile memory; Physics; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
Print_ISBN
88-900847-8-2
Type
conf
DOI
10.1109/ESSDERC.2002.194901
Filename
1503831
Link To Document