DocumentCode :
1921745
Title :
11.3: Electron emission from hafnium carbide
Author :
Mackie, William A. ; Magera, Gerald G.
Author_Institution :
Appl. Phys. Technol., Inc., McMinnville, OR, USA
fYear :
2010
fDate :
26-30 July 2010
Firstpage :
211
Lastpage :
212
Abstract :
HfC was evaluated as a cold field emission source. Single crystal HfC was produced and fabricated into cold field emitters, then angular intensity and reduced brightness were determined from experimental I(V) data. Energy distribution data were in agreement with a theoretical model. The reduced brightness, energy distribution, and emission stability are compared to commercially available sources which show that HfC produced a higher brightness and a lower energy spread than a W cold field source or a ZrO/W Schottky emitter. HfC maintains its emission level for one hour in moderate UHV condition; a dramatic improvement over the stability of W. This combined with a durability that allows for frequent flash cleaning without degradation of the emitter end form make HfC a highly promising source. We compared stability and noise to emission from a tungsten tip at the same angular intensity. By increasing the emitter temperature slightly, stability is improved while maintaining a low energy spread.
Keywords :
brightness; electron field emission; hafnium compounds; HfC; Schottky emitter; angular intensity; cold field emission source; cold field emitters; electron emission; emission stability; energy distribution data; flash cleaning; Brightness; Circuit stability; Hybrid fiber coaxial cables; Probes; Stability analysis; Temperature sensors; Thermal stability; carbide; electron source; field emission cathode; hafnium carbide; high brightness;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Nanoelectronics Conference (IVNC), 2010 23rd International
Conference_Location :
Palo Alto, CA
Print_ISBN :
978-1-4244-7889-7
Electronic_ISBN :
978-1-4244-7888-0
Type :
conf
DOI :
10.1109/IVNC.2010.5563231
Filename :
5563231
Link To Document :
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