Title :
On the n+-GaAs/p+-InGaP/n--GaAs High-Barrier Camel-Like Gate Transistor for High-Breakdown, Low-Leakage and High-Temperature Operations
Author :
Liu, W.C. ; Yu, K.H. ; Chuang, H.M. ; Lin, K.W. ; Lee, K.M. ; Tsai, S.F.
Author_Institution :
Inst. Microelectronics, Dept. E.E., Taiwan
fDate :
24-26 September 2002
Keywords :
Carrier confinement; FETs; Gallium arsenide; HEMTs; Indium gallium arsenide; Leakage current; MESFETs; MODFETs; Metal-insulator structures; Temperature;
Conference_Titel :
Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
Print_ISBN :
88-900847-8-2
DOI :
10.1109/ESSDERC.2002.194908
