Title :
Impact of Gate Recess Offset on Pseudomorphic HEMT Performance: A Simulation Study
Author :
Asenov, A. ; Babiker, S. ; Cameron, N. ; Taylor, M.R.S. ; Beaumont, S.P.
Author_Institution :
Nanoelectronics Research Centre, Department of Electronics and Electrical Engineering, Glasgow University, Glasgow, G12 8LT, Scotland, UK
Abstract :
In this paper, using carefully calibrated numerical simulations, we investigate the effect of the gate recess offset in short channel Pseudomorphic HEMTs (PsHEMTs) on the small signal equivalent circuit components and on the overall device performance. We found that although the cut-off frequency fT of the investigated PsHEMTs has a maximum at 30 nm recess offset, fmax increases monotonously with the lateral extension of the offset.
Keywords :
Circuit simulation; Electrical resistance measurement; Equivalent circuits; Etching; Fabrication; Gallium arsenide; Medical simulation; Numerical simulation; PHEMTs; Radio frequency;
Conference_Titel :
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location :
Bologna, Italy
