DocumentCode
1921872
Title
Impact of Gate Recess Offset on Pseudomorphic HEMT Performance: A Simulation Study
Author
Asenov, A. ; Babiker, S. ; Cameron, N. ; Taylor, M.R.S. ; Beaumont, S.P.
Author_Institution
Nanoelectronics Research Centre, Department of Electronics and Electrical Engineering, Glasgow University, Glasgow, G12 8LT, Scotland, UK
fYear
1996
fDate
9-11 Sept. 1996
Firstpage
1017
Lastpage
1020
Abstract
In this paper, using carefully calibrated numerical simulations, we investigate the effect of the gate recess offset in short channel Pseudomorphic HEMTs (PsHEMTs) on the small signal equivalent circuit components and on the overall device performance. We found that although the cut-off frequency fT of the investigated PsHEMTs has a maximum at 30 nm recess offset, fmax increases monotonously with the lateral extension of the offset.
Keywords
Circuit simulation; Electrical resistance measurement; Equivalent circuits; Etching; Fabrication; Gallium arsenide; Medical simulation; Numerical simulation; PHEMTs; Radio frequency;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location
Bologna, Italy
Print_ISBN
286332196X
Type
conf
Filename
5435840
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