Title :
An InGaP/GaAs Resonant-Tunnelling Bipolar Transistor (RTBT) with Multiple Negative-Differential-Resistance (MNDR) Phenomena
Author :
Chuang, H.M. ; Lin, K.W. ; Pan, H.J. ; Lee, K.M. ; Liao, X.D. ; Liu, W.C.
Author_Institution :
Inst. Microelectronics, Dept. E.E., Taiwan
fDate :
24-26 September 2002
Keywords :
Bipolar transistors; Breakdown voltage; Electrons; Gallium arsenide; Low voltage; Resonant tunneling devices; State estimation; Stationary state; Superlattices; Temperature;
Conference_Titel :
Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
Print_ISBN :
88-900847-8-2
DOI :
10.1109/ESSDERC.2002.194909
