DocumentCode
1921906
Title
AC conductivity and dielectric properties of sol-gel PZT thin films for ferroelectric memory applications
Author
Chen, Xiaohua ; Kingon, Angus I. ; Auciello, Orlando
Author_Institution
Dept. of Mater. Sci. & Eng., North Carolina State Univ., Raleigh, NC, USA
fYear
1992
fDate
30 Aug-2 Sep 1992
Firstpage
229
Lastpage
232
Abstract
The dielectric properties and AC conductivity of sol-gel PZT (lead zirconate titanate) thin films were measured at frequencies between 10 and 106 Hz and temperatures between 25°C and 500°C. At high frequencies e.g., >2 kHz, a maximum is observed in the real part of the complex dielectric constant, which corresponds to the Curie point. However, at low frequencies, e.g., 200 Hz, the dielectric constant increases monotonically with temperature. A space charge blocking model and an electric charge hopping model are discussed in order to explain this phenomenon. Further experimental results on the frequency dependence of dielectric constant and AC conductivity provide additional support for the charge hopping model. The AC conductance at high temperatures is much more sensitive to temperature than that at low temperatures. The activation energy Q1 at high temperatures is about 1.3 eV. The apparent activation energy Q2 at low temperatures is about 0.35 eV
Keywords
ferroelectric Curie temperature; ferroelectric materials; ferroelectric storage; ferroelectric thin films; high-frequency effects; hopping conduction; lead compounds; permittivity; space charge; 10 to 106 Hz; 25 to 500 degC; AC conductivity; Curie point; PZT; PbZrO3TiO3; activation energy; complex dielectric constant; dielectric properties; electric charge hopping model; ferroelectric memory applications; frequency dependence; high frequencies; high temperatures; sol-gel PZT thin films; space charge blocking model; zirconate titanate; Conductivity measurement; Dielectric constant; Dielectric films; Dielectric measurements; Dielectric thin films; Frequency dependence; Frequency measurement; Space charge; Temperature sensors; Titanium compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Applications of Ferroelectrics, 1992. ISAF '92., Proceedings of the Eighth IEEE International Symposium on
Conference_Location
Greenville, SC
Print_ISBN
0-7803-0465-9
Type
conf
DOI
10.1109/ISAF.1992.300670
Filename
300670
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