DocumentCode :
1921930
Title :
Self Heating in InP DHBT Technology for 40 Gb/s ICs
Author :
Giguerre, L. ; Abboun, M. ; Aniel, F. ; Zerounian, N. ; Dubois, A. ; Adde, R. ; Blayac, S. ; Riet, M. ; Konczykowska, A.
Author_Institution :
IEF, Paris-South University, Orsay Cedex, France
fYear :
2002
fDate :
24-26 September 2002
Firstpage :
223
Lastpage :
226
Keywords :
DH-HEMTs; Gallium arsenide; Heating; Indium gallium arsenide; Indium phosphide; Pulse measurements; Semiconductor process modeling; Thermal conductivity; Thermal resistance; Wet etching;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
Print_ISBN :
88-900847-8-2
Type :
conf
DOI :
10.1109/ESSDERC.2002.194910
Filename :
1503840
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1921930
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