Title :
A New Technological Process for Fabrication of InGaAsP/InP Heterostructure Laser using CBE/MOCVD Growth Techniques
Author :
Bertone, D. ; Boschis, L. ; Fornuto, G. ; Gastaldi, L. ; Madella, M. ; Meliga, M. ; Stano, A.
Author_Institution :
CSELT - Centro Studi e Laboratori Telecomunicazioni, Via G. Reiss Romoli 274 - 10148 Torino ITALY
Abstract :
We describe a new technological process which allows to avoid Reactive Ion Etching (RIE) on the laser active layer. Combining this process with the growth uniformity of the Chemical Beam Epitaxy (CBE) we are able to obtain high yield process and good device performances.
Keywords :
Chemical lasers; Chemical processes; Chemical technology; Epitaxial growth; Etching; Indium phosphide; Laser beams; MOCVD; Molecular beam epitaxial growth; Optical device fabrication;
Conference_Titel :
Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
Conference_Location :
Edinburgh, Scotland
