Title :
Extraction of Si-SiO2 Interface Trap Densities in MOSFET´s with Oxides Down to 1.3 nm Thick
Author_Institution :
IMEP - ENSERG - INPG (UMR CNRS 5130), Grenoble, France
fDate :
24-26 September 2002
Keywords :
Charge pumps; Electron traps; Frequency; Insulation; Leakage current; MOS devices; MOSFET circuits; Pulse measurements; Tunneling; Voltage;
Conference_Titel :
Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
Print_ISBN :
88-900847-8-2
DOI :
10.1109/ESSDERC.2002.194912
