Extraction of Si-SiO2 Interface Trap Densities in MOSFET´s with Oxides Down to 1.3 nm Thick

Author

Bauza, By D.

Author_Institution

IMEP - ENSERG - INPG (UMR CNRS 5130), Grenoble, France

fYear

2002

fDate

24-26 September 2002

Firstpage

231

Lastpage

234

Keywords

Charge pumps; Electron traps; Frequency; Insulation; Leakage current; MOS devices; MOSFET circuits; Pulse measurements; Tunneling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2002. Proceeding of the 32nd European

Print_ISBN

88-900847-8-2

Type

DOI

10.1109/ESSDERC.2002.194912

Filename

1503842

Link To Document