DocumentCode :
1921993
Title :
Fatigue effect on the I-V characteristics of sol-gel derived PZT thin films
Author :
Lee, S.C. ; Teowee, G. ; Schrimpf, R.D. ; Birnie, D.P. ; Uhlmann, D.R. ; Galloway, K.F.
Author_Institution :
Arizona Univ., Tucson, AZ, USA
fYear :
1992
fDate :
30 Aug-2 Sep 1992
Firstpage :
240
Lastpage :
243
Abstract :
The effect of fatigue on sol-gel-derived PZT (lead zirconate titanate) thin films were analyzed using the I-V measurement method. Under bipolar stress, polarization reduction was correlated with a decrease in the switching current and an increase in the leakage current. Neither a significant decrease in the polarization nor an increase in the leakage current was observed under unipolar stress. The fatigue effects are explained by an increase in the space-charge regions near the electrodes or oxygen-deficient dendrite growth. A static I-V measurement method for ferroelectric thin films was developed to distinguish the leakage current from the switching current. The initial polarization state and the exponential decay behavior of the switching current were considered in this method
Keywords :
dielectric polarisation; ferroelectric materials; ferroelectric switching; ferroelectric thin films; lead compounds; space charge; I-V characteristics; PZT; PbZrO3TiO3; bipolar stress; exponential decay; fatigue; initial polarization state; leakage current; oxygen-deficient dendrite growth; polarization reduction; sol-gel derived PZT thin films; space-charge regions; switching current; Current measurement; Fatigue; Ferroelectric materials; Hysteresis; Leakage current; Polarization; Resistors; Switched capacitor circuits; Switching circuits; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applications of Ferroelectrics, 1992. ISAF '92., Proceedings of the Eighth IEEE International Symposium on
Conference_Location :
Greenville, SC
Print_ISBN :
0-7803-0465-9
Type :
conf
DOI :
10.1109/ISAF.1992.300674
Filename :
300674
Link To Document :
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