Title :
Defect structures and fatigue in ferroelectric PZT thin films
Author :
Wu, Zheng ; Sayer, Michael
Author_Institution :
Dept. of Phys., Queens Univ., Kingston, Ont., Canada
fDate :
30 Aug-2 Sep 1992
Abstract :
A thermally stimulated current (TSC) technique has been used to characterize natural and electric-field-induced defect distributions in PZT (lead zirconate titanate) films. The principal defects give rise to TSC peaks near 400 K and 500 K, with defect concentrations of about 10 21 cm-3 and an activation energy of about 0.8 eV. Changes in the defect structures as a function of the number of switching cycles and processing conditions are described, and their relationship to fatigue are discussed. It is suggested that the defects distributions measured by TSC arise from extended defects rather than from point defects. Domain splitting and pinning as a result of such defects generated during polarization reversals may account for fatigue in PZT films
Keywords :
crystal defects; dielectric polarisation; electric domains; ferroelectric materials; ferroelectric switching; ferroelectric thin films; lead compounds; thermally stimulated currents; PZT; PbZrO3TiO3; TSC; activation energy; defect structures; domain splitting; electric-field-induced defect distributions; extended defects; fatigue; ferroelectric PZT thin films; pinning; polarization reversals; processing conditions; switching cycles; thermally stimulated current; Aging; Degradation; Fatigue; Ferroelectric films; Ferroelectric materials; Lattices; Optical films; Optical polarization; Temperature; Transistors;
Conference_Titel :
Applications of Ferroelectrics, 1992. ISAF '92., Proceedings of the Eighth IEEE International Symposium on
Conference_Location :
Greenville, SC
Print_ISBN :
0-7803-0465-9
DOI :
10.1109/ISAF.1992.300675
