Defect structures and fatigue in ferroelectric PZT thin films

Author

Wu, Zheng ; Sayer, Michael

Author_Institution

Dept. of Phys., Queens Univ., Kingston, Ont., Canada

fYear

1992

fDate

30 Aug-2 Sep 1992

Firstpage

244

Lastpage

247

Abstract

A thermally stimulated current (TSC) technique has been used to characterize natural and electric-field-induced defect distributions in PZT (lead zirconate titanate) films. The principal defects give rise to TSC peaks near 400 K and 500 K, with defect concentrations of about 10 ²¹ cm^-3 and an activation energy of about 0.8 eV. Changes in the defect structures as a function of the number of switching cycles and processing conditions are described, and their relationship to fatigue are discussed. It is suggested that the defects distributions measured by TSC arise from extended defects rather than from point defects. Domain splitting and pinning as a result of such defects generated during polarization reversals may account for fatigue in PZT films

Keywords

crystal defects; dielectric polarisation; electric domains; ferroelectric materials; ferroelectric switching; ferroelectric thin films; lead compounds; thermally stimulated currents; PZT; PbZrO3TiO3; TSC; activation energy; defect structures; domain splitting; electric-field-induced defect distributions; extended defects; fatigue; ferroelectric PZT thin films; pinning; polarization reversals; processing conditions; switching cycles; thermally stimulated current; Aging; Degradation; Fatigue; Ferroelectric films; Ferroelectric materials; Lattices; Optical films; Optical polarization; Temperature; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 1992. ISAF '92., Proceedings of the Eighth IEEE International Symposium on

Conference_Location

Greenville, SC

Print_ISBN

0-7803-0465-9

Type

conf

DOI

10.1109/ISAF.1992.300675

Filename

300675