DocumentCode
1922061
Title
Simulations and Parametric Investigations of Plasma Etching Mechanisms of GaAs Compounds
Author
Ketata, K. ; Koumetz, S. ; Ketata, M. ; Debrie, R.
Author_Institution
LCIA/INSA de Rouen, B.P. 08,76131 Mont Saint Aignan, FRANCE, Phone: (33) 35 52 84 08; Fax: (33) 35 52 84 83; e-mail : ketata@insa-rouen.fr
fYear
1994
fDate
11-15 Sept. 1994
Firstpage
819
Lastpage
822
Abstract
This work introduces a comprehensive analytic model of the sputtering mechanism present in IBE and RIE processes. Our final objective is to correlate the etch rate to the plasma reactor parameters. Experimental verifications for GaAs etching show a good agreement for IBE. In the case of RIE, the non perfect agreement is explained by the influence of effects such as flow rate and temperature not taken into account in the theoretical approach. We also present parametric investigations of GaAs etched in SiCl4 plasma and results of XPS analysis.
Keywords
Gallium arsenide; Identity-based encryption; Inductors; Ion beams; Plasma applications; Plasma simulation; Plasma temperature; Solid modeling; Sputter etching; Sputtering;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
Conference_Location
Edinburgh, Scotland
Print_ISBN
0863321579
Type
conf
Filename
5435847
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