Title :
Complementarity of Drain Current Transient Spectroscopy (DCTS) and G.R. Noise Analysis to Detect Traps in HEMTs
Author :
Saysset, N. ; Labat, N. ; Touboul, Antoine ; Danto, Y. ; Dumas, J.M.
Author_Institution :
Laboratoire IXL, URA 846-CNRS - Université Bordeaux I, 351 Cours de la Libération, 33405 TALENCE, France
Abstract :
This work deals with the performances of two electrical techniques to characterize deep levels in HEMTs. G-R noise analysis is a well-known method and its efficiency is now proved, whereas drain current transient spectroscopy provides information about the location of traps in the structure. Experimental results establish the complementarity of these two techniques.
Keywords :
Discrete cosine transforms; Electron traps; HEMTs; MODFETs; Noise figure; Noise level; Noise measurement; Spectroscopy; Temperature distribution; Transient analysis;
Conference_Titel :
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location :
Bologna, Italy
