DocumentCode
1922110
Title
A Self-Aligned Double Poly-Si Process Utilizing Non-Selective Epitaxy of SiGe:C for Intrinsic Base and Poly-SiGe for Extrinsic Base
Author
Pejnefors, J. ; Johansson, T. ; Wittborn, J. ; Santos, A. ; Norström, H. ; Smith, U. ; Cheshire, A. ; Buschbaum, T. ; Rosenblad, C. ; Ramm, J.
Author_Institution
Royal Institute of Technology (KTH)-IMIT, Kista, Sweden
fYear
2002
fDate
24-26 September 2002
Firstpage
259
Lastpage
262
Keywords
Boron; Chemical vapor deposition; Electric variables measurement; Epitaxial growth; Etching; Fabrication; Germanium silicon alloys; Information technology; Microelectronics; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
Print_ISBN
88-900847-8-2
Type
conf
DOI
10.1109/ESSDERC.2002.194919
Filename
1503849
Link To Document