Compact MOS Modelling for Analogue Circuit Simulation

The Philips compact MOS model, MOS MODEL 9, has been developed for the simulation of analogue circuits. With only 18 parameters mos MODEL 9 describes accurately the characteristics in the operating regions most important for analogue design [1,2]. Recently the capabilities of the model in describing various processes, with minimum channel lengths as low as 0.35 ¿m, have been presented [1]. MOS MODEL 9 has now become public domain [2]. This paper discusses the physical background of the model. Special emphasis is placed on the description of the subthreshold behaviour, which is of paramount importance in low voltage applications, and on the geometric scaling of the relevant model parameters.