Title :
Anomalous impact-ionization gate current in high breakdown InP-based HEMT´s
Author :
Meneghesso, G. ; Manfredi, M. ; Pavesi, M. ; Auer, U. ; Ellrodt, P. ; Prost, W. ; Tegude, F.J. ; Canal, C. ; Zanoni, E.
Author_Institution :
DEI Universitiá di Padova, via Gradenigo 6/A 35131 Padova, Italy
Abstract :
Impact-ionization phenomena have been studied in InAlAs/InGaAs HEMT´s on InP-substrates by means of DC measurements and of a 2D hydrodynamic simulator. An anomalous double bell-shaped curve behaviour of the gate current as a function of Vgs has been found and attributed to a widening of the gate-drain high electric field region on increasing Vgs beyond 0 V. We correlate impactionization features with light emission in the 1.1÷3.2 eV energy range.
Keywords :
Current measurement; Electric breakdown; Electrons; HEMTs; Hydrodynamics; Indium compounds; Indium gallium arsenide; Indium phosphide; Lattices; Length measurement;
Conference_Titel :
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location :
Bologna, Italy
