Title :
Optimization of the Reliability of 0.25 μm n-MOSFETs
Author :
Hessler, T. ; Okhonin, S. ; Dutoit, M.
Author_Institution :
Institute for Micro-and Optoelectronics, Swiss Federal Institute of Technology, CH 1015 Lausanne, Switzerland
Abstract :
The capability of different simulated parameters to predict interface trap generation in electrically stressed n-channel MOSFETs is evaluated. The insight gained from this study is used to optimize the drain of 0.25 μm n-channel fully overlapped nitrided (FOND) [1] MOSFETs in terms of drivability, speed and reliability.
Conference_Titel :
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location :
Bologna, Italy
