DocumentCode :
1922305
Title :
Gate-Self-Aligned N-Channel and P-Channel Germanium Mosfets
Author :
Ransom, C.M. ; Jackson, T.N. ; DeGelormo, J.F.
Author_Institution :
IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY
fYear :
1991
fDate :
17-19 June 1991
Keywords :
Aluminum; Annealing; Charge carrier processes; Dielectric substrates; Germanium; Ion implantation; Lithography; MOSFETs; Temperature; Transconductance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 1991. 49th Annual
Conference_Location :
Boulder, CO, USA
Print_ISBN :
0-87942-647-0
Type :
conf
DOI :
10.1109/DRC.1991.664677
Filename :
664677
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1922305
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