Title :
Lead titanate thin films deposited by metallorganic chemical vapor deposition (MOCVD)
Author :
Hendricks, Warren C. ; Peng, Chien H. ; Desu, S.B.
Author_Institution :
Dept. of Mater. Sci. & Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
fDate :
30 Aug-2 Sep 1992
Abstract :
Highly transparent lead titanate (PbTiO3) thin films were deposited on both platinum-coated silicon wafers and sapphire disks. The results were characterized using XRD (X-ray diffraction) to determine the phases present and the presence of preferred orientation. SEM (scanning electron microscopy) was used to examine the morphology of both the surface and the cross-section. UV-VIS-NIR (ultraviolet, visible, near infrared) spectrophotometry was used to determine the dispersion relationship and the optical band gap energy. XRD revealed a nonoriented film on sapphire while the film on the platinum substrate was preferably oriented in the (100) and (001) directions. A relatively dense morphology was observed using SEM. The formation of a very fine structure was also observed upon annealing the films following deposition. The refractive index was 2.474 at 632.8 nm. From this index the packing density was estimated to be about 89%
Keywords :
X-ray diffraction examination of materials; annealing; chemical vapour deposition; energy gap; ferroelectric materials; ferroelectric thin films; infrared spectra of inorganic solids; lead compounds; optical constants; phase equilibrium; refractive index; scanning electron microscope examination of materials; ultraviolet spectra of inorganic solids; visible spectra of inorganic solids; Al2O3; MOCVD; NIR spectra; PbTiO3; Pt; SEM; Si; UV spectra; VIS spectra; X-ray diffraction; XRD; annealing; dense morphology; dispersion relationship; fine structure; metallorganic chemical vapor deposition; morphology; nonoriented film; optical band gap energy; packing density; phases; refractive index; sapphire disks; scanning electron microscopy; thin films; transparent lead titanate; Chemicals; Lead; Morphology; Optical films; Scanning electron microscopy; Semiconductor thin films; Silicon; Sputtering; Titanium compounds; X-ray scattering;
Conference_Titel :
Applications of Ferroelectrics, 1992. ISAF '92., Proceedings of the Eighth IEEE International Symposium on
Conference_Location :
Greenville, SC
Print_ISBN :
0-7803-0465-9
DOI :
10.1109/ISAF.1992.300690