Silicon carbide MESFETs performances and application in broadcast power amplifiers

Author

Temcamani, F. ; Pouvil, P. ; Noblanc, O. ; Brylinski, C. ; Bannelier, P. ; Darges, B. ; Prigent, J.P.

Author_Institution

ENSEA-EMO, Cergy-Pontoise, France

Volume

2

fYear

2001

fDate

20-24 May 2001

Firstpage

641

Abstract

We present DC, small signal and power characterization of recent Thomson silicon carbide MESFETs. We present also performances of SiC power amplifiers designed for use in broadcast digital television. A comparison with a LDMOS amplifier showed that SiC is a very promising material for microwave and RF power amplification.

Keywords

MESFET circuits; UHF circuits; UHF field effect transistors; UHF power amplifiers; digital television; power MESFET; silicon compounds; television equipment; wide band gap semiconductors; wideband amplifiers; 470 to 860 MHz; DC characterization; MESFET performance; RF power amplification; S parameters; SiC; UHF wideband amplifiers; breakdown voltage; broadcast digital television; broadcast power amplifiers; drain efficiency; load-pull characterization; microstrip circuit; microwave power amplification; power characterization; small signal characterization; Breakdown voltage; Conducting materials; MESFETs; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Silicon carbide; TV broadcasting; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2001 IEEE MTT-S International

Conference_Location

Phoenix, AZ, USA

ISSN

0149-645X

Print_ISBN

0-7803-6538-0

Type

conf

DOI

10.1109/MWSYM.2001.966976

Filename

966976