Bulk vs. thin film PLZT ferroelectrics

Author

Dausch, D.E. ; Haertling, G.H.

Author_Institution

Dept. of Ceramic Eng., Clemson Univ., SC, USA

fYear

1992

fDate

30 Aug-2 Sep 1992

Firstpage

297

Lastpage

300

Abstract

Lead lanthanum zirconate titanate (PLZT) ferroelectrics were produced in bulk ceramic and thin-film form in order to compare their electrical and physical properties. Both bulk and thin film samples of selected compositions were produced from the same acetate precursor solutions. Properties examined were permittivity, dissipation factor, remanent polarization, coercive field, Curie temperature, and crystallinity. Bulk ceramics were hot-pressed from chemically coprecipitated powders, and chemically derived thin films were fabricated by spin coating. Typical conditions for hot pressing were 1200°C for 4 h at 14 MPa (2000 psi), whereas the thin film were sintered at 700°C for 4 min per layer. The similarities and differences between the materials are described

Keywords

ceramics; coating techniques; dielectric polarisation; ferroelectric Curie temperature; ferroelectric materials; ferroelectric thin films; hot pressing; lanthanum compounds; lead compounds; permittivity; sintering; 1200 degC; 14 MPa; 700 degC; Curie temperature; PLZT; PbLaZrO3TiO3; acetate precursor solutions; bulk ceramic; coercive field; coprecipitated powders; crystallinity; dissipation factor; electrical properties; hot pressing; permittivity; physical properties; remanent polarization; spin coating; thin film PLZT ferroelectrics; zirconate titanate; Ceramics; Chemicals; Crystallization; Ferroelectric materials; Lanthanum; Permittivity; Polarization; Temperature; Titanium compounds; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 1992. ISAF '92., Proceedings of the Eighth IEEE International Symposium on

Conference_Location

Greenville, SC

Print_ISBN

0-7803-0465-9

Type

conf

DOI

10.1109/ISAF.1992.300691

Filename

300691