Title :
Advanced Junction Engineering for 60nm-CMOS Transistors
Author :
Müller, M. ; Bidaud, M. ; Boeuf, F. ; Halimaoui, A. ; Lamy, M. ; Lenoble, D. ; Palla, R. ; Skotnicki, T. ; Laviron, C.
Author_Institution :
Philips Semiconductors, Crolles, France
fDate :
24-26 September 2002
Keywords :
Annealing; Doping; Implants; Ion beams; MOS devices; MOSFETs; Plasma devices; Power engineering and energy; Threshold voltage; Transistors;
Conference_Titel :
Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
Print_ISBN :
88-900847-8-2
DOI :
10.1109/ESSDERC.2002.194932
