Advanced Junction Engineering for 60nm-CMOS Transistors

Author

Müller, M. ; Bidaud, M. ; Boeuf, F. ; Halimaoui, A. ; Lamy, M. ; Lenoble, D. ; Palla, R. ; Skotnicki, T. ; Laviron, C.

Author_Institution

Philips Semiconductors, Crolles, France

fYear

2002

fDate

24-26 September 2002

Firstpage

315

Lastpage

318

Keywords

Annealing; Doping; Implants; Ion beams; MOS devices; MOSFETs; Plasma devices; Power engineering and energy; Threshold voltage; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2002. Proceeding of the 32nd European

Print_ISBN

88-900847-8-2

Type

DOI

10.1109/ESSDERC.2002.194932

Filename

1503862

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