DocumentCode :
1922413
Title :
High Performance 0.1um CMOS Device with Suppressed Parasitic Junction Capacitance and Junction Leakage Current
Author :
Kim, Hyun Sik ; Pandey, Shesh Mani ; Ong, Shiang Yang ; Sarkar, Manju ; Teh, Young Way ; Benistant, Francis ; Quek, Elgin ; Bhat, Mousumi ; Chu, Sanford
Author_Institution :
Chartered Semiconductor Manufacturing Ltd., Sigapore, Singapore
fYear :
2002
fDate :
24-26 September 2002
Firstpage :
319
Lastpage :
322
Keywords :
Leakage current; Parasitic capacitance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
Print_ISBN :
88-900847-8-2
Type :
conf
DOI :
10.1109/ESSDERC.2002.194933
Filename :
1503863
Link To Document :
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