Title :
Preparation of lead-zirconate-titanate thin films by reactive RF-magnetron cosputtering using multi-element metallic targets and their evaluations
Author :
Yamamoto, Takashi ; Imai, Toshinori ; Shiozaki, Tadashi
Author_Institution :
Dept. of Electr. Eng., Nat. Defense Acad., Yokosuka, Japan
fDate :
30 Aug-2 Sep 1992
Abstract :
As-sputtered ferroelectric lead zirconate titanate (PZT) thin films were prepared on a Pt(800 nm)/Ti(350 nm)/SiO2(150 nm)/Si(100) substrate at a comparatively low temperature of about 500°C. The compositional variation of the Zr/Ti ratio in the deposited Pb(Zr0.53Ti0.47)O3 film is studied as a function of RF power, sputtering gas pressure, and substrate temperature. The dielectric constant in a 2.0-μm-thick film was ∈s=370 at an oscillation level of 1 V at 60 Hz. The remanent polarization and the coercive field were 5.2 μC/cm2 and 20 kV/cm, respectively
Keywords :
dielectric polarisation; ferroelectric materials; ferroelectric thin films; lead compounds; permittivity; sputter deposition; stoichiometry; 2.0 micron; 500 degC; 60 Hz; PZT ferroelectric thin films; Pb(Zr0.53Ti0.47)O3; PbZrO3TiO3; Pt-Ti-SiO2-Si; RF power; Si; Zr/Ti ratio; coercive field; compositional variation; dielectric constant; lead-zirconate-titanate thin films; multi-element metallic targets; reactive RF-magnetron cosputtering; remanent polarization; sputtering gas pressure; substrate temperature; Dielectric constant; Dielectric substrates; Ferroelectric materials; Lead; Radio frequency; Sputtering; Temperature; Titanium compounds; Transistors; Zirconium;
Conference_Titel :
Applications of Ferroelectrics, 1992. ISAF '92., Proceedings of the Eighth IEEE International Symposium on
Conference_Location :
Greenville, SC
Print_ISBN :
0-7803-0465-9
DOI :
10.1109/ISAF.1992.300697
