Preparation of lead-zirconate-titanate thin films by reactive RF-magnetron cosputtering using multi-element metallic targets and their evaluations

Author

Yamamoto, Takashi ; Imai, Toshinori ; Shiozaki, Tadashi

Author_Institution

Dept. of Electr. Eng., Nat. Defense Acad., Yokosuka, Japan

fYear

1992

fDate

30 Aug-2 Sep 1992

Firstpage

317

Lastpage

319

Abstract

As-sputtered ferroelectric lead zirconate titanate (PZT) thin films were prepared on a Pt(800 nm)/Ti(350 nm)/SiO₂(150 nm)/Si(100) substrate at a comparatively low temperature of about 500°C. The compositional variation of the Zr/Ti ratio in the deposited Pb(Zr_0.53Ti_0.47)O₃ film is studied as a function of RF power, sputtering gas pressure, and substrate temperature. The dielectric constant in a 2.0-μm-thick film was ∈_s=370 at an oscillation level of 1 V at 60 Hz. The remanent polarization and the coercive field were 5.2 μC/cm² and 20 kV/cm, respectively

Keywords

dielectric polarisation; ferroelectric materials; ferroelectric thin films; lead compounds; permittivity; sputter deposition; stoichiometry; 2.0 micron; 500 degC; 60 Hz; PZT ferroelectric thin films; Pb(Zr_0.53Ti_0.47)O₃; PbZrO3TiO3; Pt-Ti-SiO₂-Si; RF power; Si; Zr/Ti ratio; coercive field; compositional variation; dielectric constant; lead-zirconate-titanate thin films; multi-element metallic targets; reactive RF-magnetron cosputtering; remanent polarization; sputtering gas pressure; substrate temperature; Dielectric constant; Dielectric substrates; Ferroelectric materials; Lead; Radio frequency; Sputtering; Temperature; Titanium compounds; Transistors; Zirconium;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 1992. ISAF '92., Proceedings of the Eighth IEEE International Symposium on

Conference_Location

Greenville, SC

Print_ISBN

0-7803-0465-9

Type

conf

DOI

10.1109/ISAF.1992.300697

Filename

300697