DocumentCode :
1922462
Title :
Nonlinear III-V HBT compact models: do we have what we need?
Author :
Scott, J.
Author_Institution :
Agilent Technol., Santa Rosa, CA, USA
Volume :
2
fYear :
2001
fDate :
20-24 May 2001
Firstpage :
663
Abstract :
Within the large body of literature on models for III-V HBTs it now seems possible to find compact formulations with extractable parameters that model all important device characteristics. Predictions are as accurate as possible given the limitation of quasi-static host simulators. Some recommended strategies for extraction of parameters for certain formulations are given. Despite accurate formulation, some aspects may be better left out of models in the interest of expediency, with no significant reduction of final performance. Transit time remains difficult, and limitations of simulators swamp discrepancies between measurement and predictions of even apparently-precise models. It is concluded that compact models, if not simulators, are as physically precise as we should bother to make them.
Keywords :
III-V semiconductors; SPICE; heterojunction bipolar transistors; semiconductor device models; DC model; Gummel plot; III-V HBT; SPICE; charge storage model; extractable parameters; nonlinear compact models; parameter extraction strategies; simulator limitations; transit time; Current density; Current measurement; Equations; Heterojunction bipolar transistors; III-V semiconductor materials; Integrated circuit modeling; Temperature; Thermal factors; Thermal force; Thermal resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location :
Phoenix, AZ, USA
ISSN :
0149-645X
Print_ISBN :
0-7803-6538-0
Type :
conf
DOI :
10.1109/MWSYM.2001.966981
Filename :
966981
Link To Document :
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