DocumentCode
1922483
Title
Plasma Etching Induced Gate Oxide Leakage
Author
Brozek, Tomasz ; Chan, Y.David ; Viswanathan, Chand R.
Author_Institution
Electrical Engineering Department, University of California, 405 Hilgard Ave, Los Angeles, CA 90095, USA; IMiO, Warsaw University of Technology, Warsaw, Poland.
fYear
1995
fDate
25-27 Sept. 1995
Firstpage
255
Lastpage
258
Abstract
The paper discusses mechanisms of process-induced damage observed in plasma etched CMOS devices. The low-level oxide leakage and degraded breakdown properties are investigated and experimentally simulated with thin oxide MOS structures. It is shown, that both low-level oxide leakage and degraded QBD, with their strong antenna dependence to plasma charging, are a result of temperature accelerated low-current Fowler-Nordheim injection of positive polarity, which takes place during plasma oxide etching.
Keywords
CMOS process; Degradation; Electric breakdown; Etching; Plasma accelerators; Plasma applications; Plasma devices; Plasma properties; Plasma simulation; Plasma temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1995. ESSDERC '95. Proceedings of the 25th European
Conference_Location
The Hague, The Netherlands
Print_ISBN
286332182X
Type
conf
Filename
5435868
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