Title :
Plasma Etching Induced Gate Oxide Leakage
Author :
Brozek, Tomasz ; Chan, Y.David ; Viswanathan, Chand R.
Author_Institution :
Electrical Engineering Department, University of California, 405 Hilgard Ave, Los Angeles, CA 90095, USA; IMiO, Warsaw University of Technology, Warsaw, Poland.
Abstract :
The paper discusses mechanisms of process-induced damage observed in plasma etched CMOS devices. The low-level oxide leakage and degraded breakdown properties are investigated and experimentally simulated with thin oxide MOS structures. It is shown, that both low-level oxide leakage and degraded QBD, with their strong antenna dependence to plasma charging, are a result of temperature accelerated low-current Fowler-Nordheim injection of positive polarity, which takes place during plasma oxide etching.
Keywords :
CMOS process; Degradation; Electric breakdown; Etching; Plasma accelerators; Plasma applications; Plasma devices; Plasma properties; Plasma simulation; Plasma temperature;
Conference_Titel :
Solid State Device Research Conference, 1995. ESSDERC '95. Proceedings of the 25th European
Conference_Location :
The Hague, The Netherlands
