DocumentCode
1922499
Title
Hot-Carrier Reliability in n-MOSFET´s Used as Pass-Transistors
Author
Goguenheim, D. ; Bravaix, A. ; Vuillaume, D. ; Varrot, M. ; Revil, N. ; Mortini, P.
Author_Institution
ISEM, Maison des Technologies, Place G.Pompidou, 83000 Toulon
fYear
1996
fDate
9-11 Sept. 1996
Firstpage
987
Lastpage
990
Abstract
AC-stressing is investigated to determine the hot-carrier degradations in 0.5, ¿m CMOS technology and is interpreted by a quasi-static model based on district damage mechanisms. The hot-carrier dependence of n-MOSFET´s operating in Pass-Transistor configurations is carefully studied as a function of the propagation time and geometry. It is shown that the device degradation may exhibit in some cases a strong dependence with the propagation time and clearly differs from the simple case of inverter operation.
Keywords
CMOS technology; Degradation; Delay effects; Geometry; Hot carriers; Inverters; Logic testing; MOSFET circuits; Stress; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location
Bologna, Italy
Print_ISBN
286332196X
Type
conf
Filename
5435869
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