DocumentCode
1922531
Title
Photo-CVD of ferroelectric Pb(Zr,Ti)O3 thin films
Author
Katayama, Takuma ; Sugiyama, Masataka ; Shimizu, Masaru ; Shiosaki, Tadashi
Author_Institution
Dept. of Electron., Kyoto Univ., Japan
fYear
1992
fDate
30 Aug-2 Sep 1992
Firstpage
336
Lastpage
339
Abstract
Pb(Zr,Ti)O3 thin films were grown by the photo-CVD (chemical vapor deposition) method using Pb(C2H5) 4, Zr(O-t-C4H9)4, Ti(O-i-C 3H7)4, and O2. In this growth system, both tetragonal Pb(Zr,Ti)O3 films and rhombohedral Pb(Zr,Ti)O3 films were obtained, and the (111)-orientation of the tetragonal films was affected by the photoirradiation. It is also shown that the photoprocess enhanced the reactions involving the Zr precursors and that this enhancement caused compositional changes and an increase in growth rates. Some electrical properties of the films, which are related to the ferroelectric memory device characteristics, are also examined
Keywords
ceramics; chemical vapour deposition; dielectric hysteresis; ferroelectric switching; ferroelectric thin films; lead compounds; permittivity; PZT ferroelectric thin films; PbZrO3TiO3; dielectric constant; ferroelectric hysteresis; ferroelectric memory device; ferroelectric switching; photo-CVD; rhombohedral films; tetragonal films; Ferroelectric materials; Light sources; Plasma temperature; Semiconductor films; Semiconductor thin films; Sputtering; Substrates; Transistors; X-ray diffraction; Zirconium;
fLanguage
English
Publisher
ieee
Conference_Titel
Applications of Ferroelectrics, 1992. ISAF '92., Proceedings of the Eighth IEEE International Symposium on
Conference_Location
Greenville, SC
Print_ISBN
0-7803-0465-9
Type
conf
DOI
10.1109/ISAF.1992.300701
Filename
300701
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