Title :
Photo-CVD of ferroelectric Pb(Zr,Ti)O3 thin films
Author :
Katayama, Takuma ; Sugiyama, Masataka ; Shimizu, Masaru ; Shiosaki, Tadashi
Author_Institution :
Dept. of Electron., Kyoto Univ., Japan
fDate :
30 Aug-2 Sep 1992
Abstract :
Pb(Zr,Ti)O3 thin films were grown by the photo-CVD (chemical vapor deposition) method using Pb(C2H5) 4, Zr(O-t-C4H9)4, Ti(O-i-C 3H7)4, and O2. In this growth system, both tetragonal Pb(Zr,Ti)O3 films and rhombohedral Pb(Zr,Ti)O3 films were obtained, and the (111)-orientation of the tetragonal films was affected by the photoirradiation. It is also shown that the photoprocess enhanced the reactions involving the Zr precursors and that this enhancement caused compositional changes and an increase in growth rates. Some electrical properties of the films, which are related to the ferroelectric memory device characteristics, are also examined
Keywords :
ceramics; chemical vapour deposition; dielectric hysteresis; ferroelectric switching; ferroelectric thin films; lead compounds; permittivity; PZT ferroelectric thin films; PbZrO3TiO3; dielectric constant; ferroelectric hysteresis; ferroelectric memory device; ferroelectric switching; photo-CVD; rhombohedral films; tetragonal films; Ferroelectric materials; Light sources; Plasma temperature; Semiconductor films; Semiconductor thin films; Sputtering; Substrates; Transistors; X-ray diffraction; Zirconium;
Conference_Titel :
Applications of Ferroelectrics, 1992. ISAF '92., Proceedings of the Eighth IEEE International Symposium on
Conference_Location :
Greenville, SC
Print_ISBN :
0-7803-0465-9
DOI :
10.1109/ISAF.1992.300701
