Title :
Three-dimensional Simulation of the Channel Stop Implant Effects in Sub-quarter Micron PMOS Transistors
Author :
Burenkov, A. ; Lorenz, J.
Author_Institution :
Fraunhofer Institute of Integrated Circuits, Erlangen, Germany
fDate :
24-26 September 2002
Keywords :
Analytical models; Circuit simulation; Doping; Geometry; Implants; Integrated circuit technology; Ion implantation; Leakage current; MOSFETs; Shape;
Conference_Titel :
Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
Print_ISBN :
88-900847-8-2
DOI :
10.1109/ESSDERC.2002.194938
