Three-dimensional Simulation of the Channel Stop Implant Effects in Sub-quarter Micron PMOS Transistors

Author

Burenkov, A. ; Lorenz, J.

Author_Institution

Fraunhofer Institute of Integrated Circuits, Erlangen, Germany

fYear

2002

fDate

24-26 September 2002

Firstpage

339

Lastpage

342

Keywords

Analytical models; Circuit simulation; Doping; Geometry; Implants; Integrated circuit technology; Ion implantation; Leakage current; MOSFETs; Shape;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2002. Proceeding of the 32nd European

Print_ISBN

88-900847-8-2

Type

DOI

10.1109/ESSDERC.2002.194938

Filename

1503868

Link To Document