Title :
MOCVD growth of BaTiO3 in an 8" single-wafer CVD reactor
Author :
Van Buskirk, P.C. ; Gardiner, R. ; Kirlin, P.S. ; Krupanidhi, S.B.
Author_Institution :
Advanced Technol. Mater., Danbury, CT, USA
fDate :
30 Aug-2 Sep 1992
Abstract :
A reduced-pressure MOCVD (metal-organic chemical vapor deposition) process for the growth of BaSrTiO3 thin films was developed in a 2-in inverted-vertical reactor was developed, and preliminary studies were carried out to scale this process to a commercially available single-wafer tool. Novel process technology was used as the CVD sources were dissolved in a liquid which was measured into a vaporizer with a high-precision pump. Implementation of this process gave uniform deposition of perovskite-phase BaTiO3 over the entire surface of a 150-mm Pt-metallized Si wafer. These films exhibited crystallographic texture in the [100] direction and thickness uniformity better than ±10%. The BaSrTiO3 thin films grown in the 2-in reactor were predominantly [111] oriented: dielectric constants greater than 400 and DC leakage of 7×10-6 A/cm were achieved
Keywords :
X-ray diffraction examination of materials; barium compounds; ceramics; chemical vapour deposition; ferroelectric thin films; permittivity; strontium compounds; texture; 8 in; BaSrTiO3 thin films; BaTiO3; DC leakage; X-ray diffraction; crystallographic texture; dielectric constants; ferroelectric thin film; metal-organic chemical vapor deposition; perovskite-phase; reduced-pressure MOCVD; single-wafer CVD reactor; Binary search trees; Capacitance; Crystallization; Ferroelectric films; Inductors; MOCVD; Plasma devices; Plasma materials processing; Plasma temperature; Standards development;
Conference_Titel :
Applications of Ferroelectrics, 1992. ISAF '92., Proceedings of the Eighth IEEE International Symposium on
Conference_Location :
Greenville, SC
Print_ISBN :
0-7803-0465-9
DOI :
10.1109/ISAF.1992.300702
