Scalable large-signal device model for high power-density AlGaN/GaN HEMTs on SiC

Author

Jong-Wook Lee ; Sungjae Lee ; Webb, K.J.

Author_Institution

Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA

Volume

2

fYear

2001

fDate

20-24 May 2001

Firstpage

679

Abstract

A scalable device model for high-power, large periphery AlGaN-GaN HEMTs on SiC has been developed which includes device self-heating. The parameterized model coefficients were evaluated using S-parameters obtained from isothermal bias contours and pulsed I-V measurements. Model scaling with device size was examined by comparing with measurements for peripheries from 0.25 mm to 1.5 mm. The scaled model showed good agreement with measured S-parameters and power sweep data.

Keywords

III-V semiconductors; S-parameters; aluminium compounds; equivalent circuits; gallium compounds; microwave field effect transistors; microwave power transistors; power HEMT; semiconductor device models; silicon compounds; wide band gap semiconductors; 0.25 to 1.5 mm; AlGaN-GaN; S-parameters; SiC; SiC substrate; device self-heating; high power-density HEMTs; isothermal bias contours; large periphery HEMTs; large-signal device model; parameterized model coefficients; pulsed I-V measurements; scalable device model; Aluminum gallium nitride; Gallium nitride; HEMTs; Isothermal processes; MODFETs; Power measurement; Pulse measurements; Scattering parameters; Silicon carbide; Size measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2001 IEEE MTT-S International

Conference_Location

Phoenix, AZ, USA

ISSN

0149-645X

Print_ISBN

0-7803-6538-0

Type

conf

DOI

10.1109/MWSYM.2001.966985

Filename

966985