DAAS technique for synthesizing doped PZT and PLZT thin films

The deposition by aqueous acetate solution (DAAS) technique has been developed for the preparation of 5% Fe-doped Pb(Zr_0.53Ti _0.47)O₃ (PZT) and (Pb_0.93La_0.07 )(Zr_0.65Ti_0.35)_0.983O ₃ (PLZT) thin films on Pt⟨111⟩/Ti/SiO₂/Si substrates. PZT films, crystallized at 600°C for 10 min, display good electrical properties and fatigue characteristics. Iron doping suppressed the crystallization of the films as measured by X-ray diffraction (XRD) and Fourier-transform infrared (FTIR) spectroscopy. When 5% of the zirconium and titanium were replaced by iron in the stoichiometric precursor solution, the film crystallized predominantly in the (110) orientation. When 5% excess iron was added to the precursor solution, the film crystallized in the (100) orientation. The electronic states and charge species responsible for photoconductivity were investigated by emission/excitation and photocurrent action spectroscopy. The low photoemission at 77 K and high photoconductivity at 298 K in the doped thin films, as compared with thermally iron-doped ceramics, are attributed to surface energy quenching and low trapping state density