DocumentCode
1922682
Title
Impact of Tunnel Oxide Thickness on Erratic Erase in Flash Memories
Author
Chimenton, Andrea ; Olivo, Piero
Author_Institution
University of Ferrara, Italy
fYear
2002
fDate
24-26 September 2002
Firstpage
363
Lastpage
366
Keywords
Automatic testing; Flash memory; Instruments; Nonvolatile memory; Performance evaluation; Semiconductor device measurement; Statistical analysis; Test equipment; Threshold voltage; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
Print_ISBN
88-900847-8-2
Type
conf
DOI
10.1109/ESSDERC.2002.194944
Filename
1503874
Link To Document