Design Guidelines for Linear Amplification and Low-insertion Loss in 5-GHz-band SOI Power MOSFETs

Author

Matsumoto, Satoshi ; Hiraoka, Yasushi ; Mino, Masato

Author_Institution

NTT Telecommunications Energy Laboratories, Atsugi, Japan

fYear

2002

fDate

24-26 September 2002

Firstpage

371

Lastpage

374

Keywords

Circuits; Fabrication; Guidelines; Inductors; Laboratories; MMICs; MOSFETs; Radio frequency; Radiofrequency amplifiers; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2002. Proceeding of the 32nd European

Print_ISBN

88-900847-8-2

Type

DOI

10.1109/ESSDERC.2002.194946

Filename

1503876

Link To Document