• DocumentCode
    1922853
  • Title

    The Double-Sided Floating-Surface Detector: An Enhanced Charge-Detection Architecture for CCD Image Sensors

  • Author

    Roks, Edwin ; Centen, Peter G. ; Bosiers, Jan T. ; Huinink, Wim F.

  • Author_Institution
    Philips Imaging Technology, M.S. WAG11 - Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands
  • fYear
    1995
  • fDate
    25-27 Sept. 1995
  • Firstpage
    327
  • Lastpage
    330
  • Abstract
    A new high speed, low noise, non-destructive charge detector, called the Double-Sided Floating-Surface Detector (DSFSD), which is fabricated in a standard CCD image sensor process, is reported. This detector can be integrated in CCD image sensors and is capable of detecting large charge packets at very low noise levels. Typical values are 5-8 noise electrons (within 5 MHz) for a charge packet size of 100,000 to 250,000 electrons. The detector is used as the first MOS transistor in a three-stage source-follower configuration with a bandwidth of 150 MHz. The performance of the detector is calculated using a new, simple, model and experimentally verified.
  • Keywords
    Bandwidth; Capacitance; Charge carrier processes; Charge coupled devices; Charge-coupled image sensors; Detectors; Electrons; MOSFETs; Noise level; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1995. ESSDERC '95. Proceedings of the 25th European
  • Conference_Location
    The Hague, The Netherlands
  • Print_ISBN
    286332182X
  • Type

    conf

  • Filename
    5435889