DocumentCode
1922853
Title
The Double-Sided Floating-Surface Detector: An Enhanced Charge-Detection Architecture for CCD Image Sensors
Author
Roks, Edwin ; Centen, Peter G. ; Bosiers, Jan T. ; Huinink, Wim F.
Author_Institution
Philips Imaging Technology, M.S. WAG11 - Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands
fYear
1995
fDate
25-27 Sept. 1995
Firstpage
327
Lastpage
330
Abstract
A new high speed, low noise, non-destructive charge detector, called the Double-Sided Floating-Surface Detector (DSFSD), which is fabricated in a standard CCD image sensor process, is reported. This detector can be integrated in CCD image sensors and is capable of detecting large charge packets at very low noise levels. Typical values are 5-8 noise electrons (within 5 MHz) for a charge packet size of 100,000 to 250,000 electrons. The detector is used as the first MOS transistor in a three-stage source-follower configuration with a bandwidth of 150 MHz. The performance of the detector is calculated using a new, simple, model and experimentally verified.
Keywords
Bandwidth; Capacitance; Charge carrier processes; Charge coupled devices; Charge-coupled image sensors; Detectors; Electrons; MOSFETs; Noise level; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1995. ESSDERC '95. Proceedings of the 25th European
Conference_Location
The Hague, The Netherlands
Print_ISBN
286332182X
Type
conf
Filename
5435889
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