• DocumentCode
    1922854
  • Title

    Tunnel Barrier Properties of Polycrystalline-Si Single-Electron Transistor

  • Author

    Furuta, Y. ; Mizuta, H. ; Kamiya, Toshio ; Tan, Y.T. ; Nakazato, K. ; Durrani, Z.A.K. ; Taniguchi, K.

  • Author_Institution
    Hitachi Cambridge Laboratory, United Kingdom
  • fYear
    2002
  • fDate
    24-26 September 2002
  • Firstpage
    399
  • Lastpage
    402
  • Keywords
    Single electron transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
  • Print_ISBN
    88-900847-8-2
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2002.194952
  • Filename
    1503882