DocumentCode :
1922854
Title :
Tunnel Barrier Properties of Polycrystalline-Si Single-Electron Transistor
Author :
Furuta, Y. ; Mizuta, H. ; Kamiya, Toshio ; Tan, Y.T. ; Nakazato, K. ; Durrani, Z.A.K. ; Taniguchi, K.
Author_Institution :
Hitachi Cambridge Laboratory, United Kingdom
fYear :
2002
fDate :
24-26 September 2002
Firstpage :
399
Lastpage :
402
Keywords :
Single electron transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
Print_ISBN :
88-900847-8-2
Type :
conf
DOI :
10.1109/ESSDERC.2002.194952
Filename :
1503882
Link To Document :
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