DocumentCode :
1922883
Title :
Process Integration of Crystalline Pr2O3 High-k Gate Dielectrics
Author :
Schwalke, U. ; Boye, K. ; Hess, G. ; Müller, G. ; Haberle, K. ; Heller, R. ; Rulan, T. ; Tzschöckel, G. ; Osten, J. ; Fissel, A. ; Müssig, H.J.
Author_Institution :
Technical Univ. Darmstadt, Germany
fYear :
2002
fDate :
24-26 September 2002
Firstpage :
407
Lastpage :
410
Keywords :
CMOS process; Chemical processes; Cleaning; Crystalline materials; Crystallization; High K dielectric materials; High-K gate dielectrics; Leakage current; Molecular beam epitaxial growth; Wet etching;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
Print_ISBN :
88-900847-8-2
Type :
conf
DOI :
10.1109/ESSDERC.2002.194954
Filename :
1503884
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1922883
