DocumentCode
1922883
Title
Process Integration of Crystalline Pr2O3 High-k Gate Dielectrics
Author
Schwalke, U. ; Boye, K. ; Hess, G. ; Müller, G. ; Haberle, K. ; Heller, R. ; Rulan, T. ; Tzschöckel, G. ; Osten, J. ; Fissel, A. ; Müssig, H.J.
Author_Institution
Technical Univ. Darmstadt, Germany
fYear
2002
fDate
24-26 September 2002
Firstpage
407
Lastpage
410
Keywords
CMOS process; Chemical processes; Cleaning; Crystalline materials; Crystallization; High K dielectric materials; High-K gate dielectrics; Leakage current; Molecular beam epitaxial growth; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
Print_ISBN
88-900847-8-2
Type
conf
DOI
10.1109/ESSDERC.2002.194954
Filename
1503884
Link To Document